Path-Integral Calculation of the Electron Density of States in Mis-Structures

Abstract

The problem of determining the electron spectrum of disordered structures is currently being pursued with renewed interest owing to its importance from both the technological and fundamental point of view. Semiconductor device characteristics critically depend on the electronic density of states in the band gap tail region. The lack of information near the semiconductor band edges is a well known disadvantage of the experimental methods for obtaining the electronic density of states spectra at the semiconductor-dielectric interface. A number of theoretical approaches have been proposed to solve this problem but the advantage of the path-integral method in real space and time is that it provides an adequate treatment of both the states near the band gap center and the band tail states. This is the reason of choosing the latter for our problem.