Abstract

In the process of digital micromirror device (DMD) digital mask projection lithography, the lithography efficiency will be enhanced greatly by path planning of pattern transfer. This paper proposes a new dual operator and dual population ant colony (DODPACO) algorithm. Firstly, load operators and feedback operators are used to update the local and global pheromones in the white ant colony, and the feedback operator is used in the yellow ant colony. The concept of information entropy is used to regulate the number of yellow and white ant colonies adaptively. Secondly, take eight groups of large-scale data in TSPLIB as examples to compare with two classical ACO and six improved ACO algorithms; the results show that the DODPACO algorithm is superior in solving large-scale events in terms of solution quality and convergence speed. Thirdly, take PCB production as an example to verify the time saved after path planning; the DODPACO algorithm is used for path planning, which saves 34.3% of time compared with no path planning, and is about 1% shorter than the suboptimal algorithm. The DODPACO algorithm is applicable to the path planning of pattern transfer in DMD digital mask projection lithography and other digital mask lithography.

Highlights

  • Lithography plays a leading role in micro-nano manufacturing and many other industrial applications

  • The error rate is to measure the difference between each kind of ant colony optimization (ACO) and the optimal solution of the test set; the calculation formula is shown in Equation (11), where RACO is the optimal solution found by the ACO algorithm, and Rmin is the standard optimal solution of the test set

  • The entropy automatically divided the number of ant colonies, the white ant colony optimized the convergence speed, and the yellow ant colony optimized the solution

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Summary

Introduction

Lithography plays a leading role in micro-nano manufacturing and many other industrial applications. Electron beam [2], laser direct writing [3], laser interference lithography [4], focused ion beam [5], and DMD projection lithography [6] are employed to solve this problem. These lithographic methods are mostly single-spot exposure, and even the area array multi-point projection exposure of DMD has a small exposure area at high resolution. In the process of digital mask exposure, DMD has the advantages of large exposure area, high resolution, high

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