Abstract
A passively Q-switched mode locking operation was first realized in a Tm, Ho:LLF laser by using a reflection-type MoS2 saturable absorber. When the absorption pump power is greater than 1.1W, a stable Q-switched mode locking operation was achieved, corresponding to a 100MHz of the mode-locked frequency. The modulation depth in Q-switching envelopes is close to 100p. The results show that the reflection-type MoS2 can be used as the absorber material for 2μm all solid state lasers.
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