Passively Q-Switched Erbium-Doped Fiber Laser with TiSe&amp;lt;sub&amp;gt;2&amp;lt;/sub&amp;gt; as Saturable Absorber

Zhifeng Hong,Xiaojuan Liu,Fuhao Yang,Liping Guo,Huanian Zhang,Xiaolu Ge,Ying Liu

doi:10.4236/opj.2020.1011024

Abstract

The TiSe2 nanosheets were prepared by means of ultrasound-assisted liquid phase exfoliation (LPE) and the nonlinear saturable absorption properties were experimentally investigated. The modulation depth, saturation intensity and nonsaturable absorbance of the prepared 1T-TiSe2 SA were 15.7%, 1.28 MW/cm2 and 8.2%, respectively. Taking advantage of the saturable absorption properties of TiSe2-based SA, a passively Q-switched erbium-doped fiber (EDF) laser was systematically demonstrated. The pulse repetition rates varied from 24.50 kHz up to 73.79 kHz with the increasing pump power. The obtained shortest pulse width was 1.31 μs with pulse energy of 79.28 nJ. The system presented merits of low-cost SA preparation, system compactness, superb stability and high competition.

Highlights

Compared to continuous-wave (CW) lasers, short-pulse lasers can remarkably improve some applications due to the much higher peak power with much lower average power lever
The pulse repetition rates varied from 24.50 kHz up to 73.79 kHz with the increasing pump power
We demonstrate a passively Q-switched erbium-doped fiber (EDF) laser operating at 1560.472 nanometer with simple ring cavity configuration based on 1T-TiSe2 saturable absorbers (SAs)

Summary

Introduction

Compared to continuous-wave (CW) lasers, short-pulse lasers can remarkably improve some applications due to the much higher peak power with much lower average power lever. Q-switching and mode-locking using saturable absorbers (SAs) are the main mechanisms to modulate the laser operation from CW into pulsed regime, and SAs play a vital role in such processes [1] [2] [3]. Transition metal dichalcogenides (TMDs), a family of 2D materials, are characterized by naturally large band gaps that they are unavailable for the mid-infrared region (MIR). They can be reduced to the level available for mid-infrared application by introducing a series of defects, the preparation process and cost are complicated

Methods

Results

Conclusion