Abstract

Atomic hydrogen from plasma discharges dissolves in silicon previously amorphized by ion implantation (aSi) in the form of Si–H bonds, giving rise to infrared (IR) absorption at ∼1990 cm−1 and causing partial activation of implanted dopants. Passivation of aSi does not affect the rate at which the material subsequently undergoes solid phase epitaxy. Exposure giving rise to [H]>6 at. % causes the appearance of an additional IR absorption band at ∼2080 cm−1 and coloration of the layer. Despite annealing, the Si–H defects, normal solid phase epitaxy does not occur during subsequent heat treatment. The structural modification by H-plasma exposure coincides with etching of the layer. The observations can be understood in terms of void formation in aSi resulting from the clustering of Si–H.

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