Abstract
We investigated the passivation performance improvement of ultrathin Al2O3 tunnel oxide by chemical oxidation. The thickness of the Al2O3 tunnel oxide deposited by atomic layer deposition (ALD) was about 1 nm. The surface treatment was prepared as a function of chemical-oxidation time before ALD-Al2O3 growth. The Al2O3 films on surface-treated wafers showed improved passivation performance compared with the Al2O3 films on untreated wafers. The electrical characteristics showed that the surface-treated films, due to their enhanced initial ALD growth, enabled a low-interface-state defect and high film quality. In terms of tunneling and passivation performance, the optimal time of chemical oxidation was 2.5 min. The values of open-circuit voltage and carrier lifetime for the passivated tunnel oxide under this surface condition were 645 mV and 1 ms, respectively. A 1 nm ALD-Al2O3 films on surface treatment are applicable for passivated tunnel oxide.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
