Abstract
It is reported on the passivation of the mirror facets, opened in the air, of ridge waveguide InGaAs/GaAs/AlGaAs single quantum well (λ=980 nm) laser diodes. The passivation concept consists of two steps, namely, oxide removal by irradiation of the mirror facets with a pulsed KrF laser, immediately followed by the deposition of a thin silicon layer. The experimental arrangement (the process operation and the aging behavior-resistance to catastrophic optical damage) of the lasers thus treated are described. The structural modification of the laser facets, as probed by micro-Raman spectroscopy and Rutherford backscattering spectroscopy, and the calibration technique used to assess the rate of oxide removal are also presented.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.