Passivation of Si and a-Si:H surfaces by thin oxide and oxy-nitride layers

Abstract

An aim of the contribution is focused predominantly on investigation of electrical interface properties of MIS structures consisting of silicon-based substrates, which were passivated by 1.5–12 nm silicon dioxide, silicon nitride and/or silicon oxy-nitride layers. Substrates of different structural properties were used—crystalline Si (c-Si), amorphous hydrogenated silicon (a-Si:H), and silicon layer deposited by plasma enhanced chemical vapor deposition (PECVD). A stress was laid upon structures prepared on n moderately doped c-Si. The paper presents also changes of structural properties of a-Si:H surface after Ar low energy beam impact. For the first time we are presenting important results concerning utilization of X-ray diffraction with β filter in investigation of a-Si:H cluster structure. Considerable part of the contribution is devoted to investigation of electrical properties of Al/Si 3N 4/Si (2–3 nm)/GaAs structures with aim to clarify the particular effect of the ultrathin Si interlayer in the structure. Our observations indicate that the silicon interlayer can act as delta doping of GaAs and/or as quantum well. Therefore, the experimental results are compared and discussed with calculated ones obtained by application of our theoretical description of electron emission of quantum well.