Abstract
A wet-chemical process has been developed to passivate the Si (100) surface with S in an aqueous solution. The solution contains an etchant for SiO2, ammonium hydroxide [NH4OH], and a passivant, ammonium sulfide [(NH4)2S]. The compatibility of the etchant with the passivant allows SiO2, native or thermal, to be removed in-situ. A fresh and clean Si(100) surface is exposed right before the surface is passivated by S. To monitor the passivation quality, Schottky barrier heights of Al and Ni on S-passivated n-type and p-type Si(100) have been measured. Due to the passivation of dangling bonds by S, surface states are reduced to a great extent and Schottky barrier heights of Al and Ni on Si(100) show a greater sensitivity to their respective work functions. Our experimental results also reveal that surface states dominate over surface dipole in controlling the Schottky barrier height in these metal-Si systems.
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