Passivation of Semiconductor Surfaces for Improved Radiation Detectors: X-Ray Photoemission Analysis

Abstract

AbstractSurface passivation of device-grade radiation detector materials was investigated using x-ray photoelectron spectroscopy in combination with transport property measurements before and after various chemical treatments. Specifically Br-MeOH (2% Br), KOH with NH4F/H2O2 and NH4OH solutions were used to etch, reduce and oxidize the surface of Cd(1-x)ZnxTe semiconductor crystals. Scanning electron microscopy was used to evaluate the resultant microscopic surface morphology. Angle-resolved high-resolution photoemission measurements on the valence band electronic structure and core lines were used to evaluate the surface chemistry of the chemically treated surfaces. Metal overlayers were then deposited on these chemically treated surfaces and the I-V characteristics measured. The measurements were correlated to understand the effect of interface chemistry on the electronic structure at these interfaces with the goal of optimizing the Schottky barrier height for improved radiation detector devices.