Abstract
We report the results of passivation of n-GaAs surface by Langmuir-Blodgett films. The capacitance-voltage and current-voltage characteristics in a metal-insulator-semiconductor configuration fabricated using films as insulators, show that the frequency dispersion of the accumulation capacitance is small, indicating that the high frequency capacitance under accumulation is due to the LB film. It has been shown that it reduces the surface barrier characteristic of GaAs surfaces, and may offer hope for unpinning the surface Fermi level. We offer a possible explanation for these findings in terms of the advanced unified defect and the effective work function models.
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