Abstract
Alumina was evaporated on InP(100) and InSb/InP(100) substrates. The InSb buffer layer permits thermal and structural protection of the indium phosphide substrate. This layer was obtained by condensation of antimony atoms on the indium-rich InP surface after ionic etching. The evaporation of antimony leads to Sb–In bonds. Modellization of the Auger signal variations during alumina condensation was compared to the experimental results. Auger measurements indicate the improvement of the elaborated structure. This fact has been confirmed by the electrical C(V) characterizations. © 1998 John Wiley & Sons, Ltd.
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