Abstract
High-energy hydrogen ion (proton) implantation is used in Si for intentionally creating defects, while low-energy H is known for passivation of a variety of defects and impurities. We have carried out a study of low-energy ( < 0.4 keV) H passivation of defects produced by 100 keV H implantation. Both Schottky barrier transport and deep level transient spectroscopy measurements give evidence of self-passivation of defects produced by H implantation.
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