Abstract
The role of Gd2O3 is investigated in our previously discovered oxide films of Ga2O3(Gd2O3) for GaAs surface passivation. Based on the systematic dependence of the dielectric properties of (Ga2O3)1−x(Gd2O3)x on the Gd (x) content, we showed that pure gallium oxide does not effectively passivate GaAs, and Gd2O3 is a necessary component to stabilize the gallium oxide in the 3+ fully oxidized state due to the electropositive nature of Gd+3. This gives rise to electrically insulting films of low leakage current and high electrical breakdown strength.
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