Abstract
A silicon surface covered with ∼150 Å of strontium titanium oxide was exposed to both atomic and molecular hydrogen at temperatures between 20 and 300 °C. A rf probe was used to continuously monitor changes in charge-carrier recombination centers at the SrTiO3/Si interface by following the steady-state photogenerated carrier concentration in the silicon. Independent passivation of interfacial defects was observed by both atomic and molecular hydrogen.
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