Abstract
Ultrathin oxide layers on crystalline silicon (c-Si) were prepared by different wet-chemical, plasma- and thermal oxidation techniques. The resulting electronic and chemical SiO 2 /Si interface properties were analyzed, compared and evaluated by combined x-ray photoemission (XPS) and surface photovoltage (SPV) measurements. Depending on the oxidation technique, chemically abrupt SiO 2 /Si interfaces (suboxide amounts $ 2 /Si interfaces are able to generate low interface defect states densities.
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