Abstract
Ultrathin oxide layers on crystalline silicon (c-Si) were prepared by different wet-chemical, plasma- and thermal oxidation techniques. The resulting electronic and chemical SiO 2 /Si interface properties were analyzed, compared and evaluated by combined x-ray photoemission (XPS) and surface photovoltage (SPV) measurements. Depending on the oxidation technique, chemically abrupt SiO 2 /Si interfaces (suboxide amounts $ 2 /Si interfaces are able to generate low interface defect states densities.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
