Passivation of copper films with magnesium doping using recoil ion implantation

Abstract

This work investigates the effects of Ar + ion implantation through a multilayer structure of SiO 2(100 nm)/Mg(20 nm)/Cu/SiO 2/Si on the oxidation resistance of Cu films. Experimental results indicate that implantation at 130 keV to a dose of 5×10 15 cm −2 significantly enhances the oxidation resistance at temperatures up to 375°C. At this energy, a small number of Mg atoms are knocked out, leading to formation of an impervious MgO barrier layer on the Cu surface, which effectively suppresses the oxidizing diffusion paths.