Abstract
A new passivation layer of AlOx/SiOx were prepared, in which 80 nm SiOx was prepared by spin-coating perhydropolysilazane (PHPS) and annealed at 450°C. In order to compare the passivation effect of single AlOx layers and the SiOx/AlOx stack on silicon surface, the fixed charge (Qf) in the passivated layers and chemical passivation effect were obtained by corona charge method. Fourier transform infrared spectroscopy (FTIR) and Time-of-flight secondary ion mass spectrometry (TOF-SIMS) was used to investigate the Si-H, Si-O bonds and the hydrogen profile in the passivation layer, respectively. The result reveals that the single layer of AlOx provides good field effect with a large amount of negative Qf. Furthermore, SiOx capping on AlOx have more excellent chemical passivation because of amount of H saturate the dangling bonds on the silicon surface.
Highlights
Dangling bonds are formed on the surface of the silicon due to the broken of periodicity, causing a large increase in carriers surface recombination velocity [1]
In order to compare the passivation effect of single AlOx layers and the SiOx/AlOx stack on silicon surface, the fixed charge (Qf) in the passivated layers and chemical passivation effect were obtained by corona charge method
We used PHPS to fabricate SiOx capping layer on the atomic layer deposition (ALD) AlOx passivation layers to improve the passivation on silicon surface, and compare the passivation quality of ALD AlOx and AlOx/SiOx stacks and their passivation mechanism
Summary
Dangling bonds are formed on the surface of the silicon due to the broken of periodicity, causing a large increase in carriers surface recombination velocity [1]. Surface passivation technology can effectively reduce the of carriers surface recombination velocity and increase effective minority carrier lifetime τeff of silicon by chemical passivation and field-effect passivation [2, 3]. H and O atoms can saturate the dangling bonds at the silicon surface; the field effect passivation forms electric field which electrostatically shields the charge carriers from the interface, so the carrier surface recombination velocity can be reduced because of the lower possibility of meeting for the two type of carriers. In order to improve the firing stability, the Al2O3 layer usually is capped with a PECVD silicon nitride (SiNx) layer [10]. We used PHPS to fabricate SiOx capping layer on the ALD AlOx passivation layers to improve the passivation on silicon surface, and compare the passivation quality of ALD AlOx and AlOx/SiOx stacks and their passivation mechanism
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