Abstract
The surface preparation of GaAs with HCl solutions is shown to be very important in determining anodic oxidation characteristics as well as resulting interface state densities on oxidized samples. Auger data and chemical thermodynamic arguments are used to show that the HCl pretreatment selectively removes Ga while leaving elemental arsenic on the GaAs surface. Interface state densities are compared for various HCl pretreatment times. Growth of the anodic oxides in neutral electrolytes containing KF are beneficial for the interface state density.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
