Abstract
The surface preparation of GaAs with HCl solutions is shown to be very important in determining anodic oxidation characteristics as well as resulting interface state densities on oxidized samples. Auger data and chemical thermodynamic arguments are used to show that the HCl pretreatment selectively removes Ga while leaving elemental arsenic on the GaAs surface. Interface state densities are compared for various HCl pretreatment times. Growth of the anodic oxides in neutral electrolytes containing KF are beneficial for the interface state density.
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