Abstract
An analytical method is described to determine the number and partitioning of displacements of surface and bulk atoms by low energy ions incident on a solid. Results are presented for Ge, Si and C (diamond and graphite). For Ge the results are compared with Monte Carlo calculations using the computer code TRIMRC. Good agreement is found in this comparison, thereby verifying the adequacy of several approximations introduced into the formalism. Displacement threshold and surface-to-bulk displacement ratio contours are presented as a function of ion mass and energy based on our analytic calculations. Comparison of these contours with recent experimental results for Si suggests that this approach provides a global framework for understanding and optimizing the effects of low-energy ions on semiconductor expitaxial growth.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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