Abstract

Conventional power management knobs such as voltage scaling or power gating have been shown to have a beneficial effect on the aging phenomena caused Negative Bias Temperature Instability (NBTI). Such a benefit can be especially exploited in SRAM memories, which are particularly sensitive to NBTI effects: given their symmetric structure, they cannot in fact take advantage of value-dependent recovery. We propose an architectural solutions that is based on the idea of partitioning a memory into multiple banks of identical size. While this organization has been widely used for reducing both dynamic and static power, its exploitation for aging benefits requires proper management of the existing idleness of the various banks. This can be achieved by means of a sort of time-varying addressing scheme in which addresses are mapped to different banks over time in such a way that the idleness is uniformly distributed over all the banks. Experimental analysis shows that it is possible to simultaneously reducing leakage power and aging in caches, with minimal overhead and without modifying the internal structure of the SRAM arrays.

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