Abstract
This paper presents a silicon-based complex-functional monolithic microwave integrated circuits (MMICs) design methodology. Post-layout simulation stage particularities are discussed. Pre-tapeout functionality verification results of the C-band phase and amplitude control MMIC based on 0.18 μm SiGe BiCMOS technology are also presented.
Highlights
Monolithic microwave integrated circuits (MMICs) are widely used in phased array radar and communication systems
Design methodology and results of post-layout simulation of the C-band phase and amplitude control MMIC based on 0.18 μm SiGe BiCMOS technology are presented in this paper
Complex-functional MMIC design starts with system level calculations and functional blocks topology selection based on initial specifications
Summary
Monolithic microwave integrated circuits (MMICs) are widely used in phased array radar and communication systems. Application of integrated circuits (ICs) based on silicon (Si) or silicon-germanium (SiGe) technologies can solve the problem of phased array systems high cost, especially in mass production. They are gaining popularity among system designers due to high level of integration and cost effectiveness in comparison with III-V semiconductor technologies. EM analysis becomes an indispensable tool for characterizing the on-chip passive structures In this regard, design methodology and results of post-layout simulation of the C-band phase and amplitude control MMIC based on 0.18 μm SiGe BiCMOS technology are presented in this paper
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