Abstract

Summary form only given. In laser generated plasma experiments, the properties of ion streams such as ion energies, current densities, the ion charge state, angular and energy distributions mainly depend on the target material, the parameters of the laser radiation used and irradiation geometry. In this contribution, the influence of the ion component of the plasma has been considered in order to develop ion sources useful in laser-induced implantation and co-deposition of layers of semiconductor materials. To produce ions emitted from irradiated monocrystalline Fe + 2%Si and Fe solid targets the repetitive Nd:YAG laser with energy up to 0.8 J, in a 3.5 ns-pulse, with repetition rate of up to 10 Hz has been recently employed. The laser was operated at a first and second harmonic of fundamental frequency corresponding to wavelengths 1.06 mum and 0.53 mum, respectively. The parameters of the ion streams were measured with the use of ion collectors and an electrostatic ion energy analyzer utilizing the time-of-flight method. The analysis of the ion currents shows that the silicon in the admixture target material enhances the production of ion particles and their energy.

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