Abstract
Recently, we calculated an effect of surface charges on potential barriers embedded inside a Si target. As a result, electrons and holes transport in a semiconductor target could be controlled by ionized atoms or molecules situated inside the surface adsorbate layer. Since GaAs possesses higher electron mobility than Si, in this paper we calculate the potential distribution and charge carriers motion dependences on the GaAs target surface charge value and dopant concentration. Computer simulation was implemented using the software COMSOL Multiphysics. The obtained results can help to improve a design of GaAs radiation detector, particle detector, surface charge detector, biochemical sensor, etc.
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