Abstract
Gallium nitride has attracted a great deal of interest in recent years due to its power handling ability. In addition, its noise performance is known to be good. In this letter, we present a method for determining the bias current density needed to obtain optimal noise figure for gallium nitride high-electron mobility transistors (HEMTs). Particle swarm optimization is used to fit transistor S parameters to a model, enabling the calculation of the transistor's two-port noise parameters. This process is performed for different bias points for different-sized transistors, leading to the conclusion that a current density of 0.3 mA/μm yields the best minimum noise figure. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:652–656, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25758
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