Abstract
The growth of silicon particles has been measured in silane-hydrogen radio-frequency (rf) discharges using a typical hydrogen/silane dilution ratio (20) and the pressure range (1.2–2.2Torr) used for the production of amorphous and microcrystalline silicon films and devices. By operating brief discharges without gas flow, the particle size is obtained from the afterglow diffusion and the particle density from the scattered-light intensity. These small-reactor data thus provide the expected particle size and density versus location-in a commercial large-area–isothermal-flowing-gas reactor. Particle growth rate is a strong function of pressure, whereas film growth rate is almost independent of pressure. Both growth rates are sensitive to rf voltage, although particle growth is more sensitive.
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