Abstract
A detailed quantitative analysis of particle events observed in Charge Coupled Devices (CCDs) requires the knowledge of particle detection properties of the employed CCDs such as the detection threshold for energy deposition, efficiency for different kinds of radiation and the relation between the signal and the deposited energy inside the sensitive volume. For this purpose the CCD-chip was described by a simple geometrical model containing the effective thicknesses of the p-n semiconductor junctions dj and a covering dead layer d T above them as parameters. The corresponding geometrical quantities were experimentally estimated to be 1.3 μm and 0.9 μm respectively by using different kinds of radiation.
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