Partial top dielectric stack distributed Bragg reflectors for red vertical cavity surface emitting laser arrays

Abstract

Room temperature continuous wave operation of red (/spl lambda/ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> /spl sim/660 nm) vertical cavity surface emitting laser arrays is reported. The 1×64 arrays have a pitch of 100 μm with device diameters of 15 μm. Grown by metalorganic vapor phase epitaxy, the devices consist of an AlGaInP strained quantum well optical cavity active region surrounded by AlGaAs distributed Bragg reflectors (DBR's). The top coupling DBR includes a partial dielectric stack, deposited after implanted device fabrication. All 64 devices operate simultaneously with peak output powers >0.45 mW, threshold currents <1.5 mA, and threshold voltages /spl les/2.7 V. The differential quantum efficiencies exceed 10%.