Abstract

AbstractThree partial structure factors, Sij(Q), have been evaluated from the scattered X‐ray intensities of liquid HgTl alloys measured by Halder et al. [7] and of liquid HgIn alloys measured by Halder and Wagner [8] assuming that the Sij(Q) are independent on the relative abundance of the respective elements in the alloys. The functions Sij(Q) are independent on the relative abundance of the respective elements in the alloys. The functions Sij(Q) and Sij(Q) and their reduced radial distribution functions Gii(r) and Gjj(r) obtained are very similar to those observed in their respective pure liquid metals. In both cases the partial Sij(Q) and Gij(r) have maxima which lie in between those of the pure elementes. From these results, liquid HgIn and HgTl alloys seem to be interpreted as random mixing fluids. Besides, the electrical resistivity was calculated using Faber‐Ziman's theory [14] and the pseudopotential of Evans [15] and compared with experimental data.

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