Partial sputtering yields of CdS with self-ion bombardment

Abstract

A computer code SCUFFLE has been developed to simulate sputtering and atomic displacement in a crystalline target with the binary collision approximation. The main feature of this program is a treatment of the interaction of an incident ion with the real surface of the crystalline solid. The role of the surface structure and surface defects in sputtering and radiation damage can be investigated by this code. HCP CdS monocrystals with the c-axis normal to the surface have been investigated for cases when respectively the Cd- and S-plane appears on the surface. The monocrystals have been “bombarded” by Cd + and S + ions. The partial sputtering yields of CdS have been calculated for incident ion energies of 200–1000 eV and incident angles of 0–90°.