Partial densities of states and chemical shifts in the system a-SiO x:H (0 ≤ x ≤ 2.2)

Abstract

We have studied the electronic states of hydrogenated amorphous SiO x films in the concentration range 0 ≤ x ≤ 2.2 applying x-ray emission spectroscopy. Si L-emission bands are presented. For x ≈ 2 they are compared with Si K-and O K-emission bands, UPS/XPS valence band spectra and ab-initio calculations of the local partial densities of states (LPDOS) of α-quartz. The XES results show that the Si-O bonds create Si 3d-like states forming a peak in the Si L-emission bands the intensity of which is sensitive to sample composition.- Compared to unhydrogenated a-SiO 2 the O K-emission bands of hydrogenated samples is shifted to higher photon energies, while photon energies of Si K- and Si L-emission bands are not affected by hydrogenation of samples.