Abstract
In this paper, a novel through-silicon via (TSV) structure, named partial coaxial TSV (PC-TSV), is proposed to suppress TSV-induced substrate noise. In this structure, the via is surrounded by a benzocyclobutene (BCB) layer, and a grounded metal ring placed at one end. The BCB layer can effectively reduce the leakage of the signal to the substrate, and the metal ring provides a low impedance path for the substrate noise. An equivalent RLGC model of this structure is also established, and it is verified by simulated result from CST. Then, the performance of PC-TSV is compared with that of the traditional TSV, TSV with p+ layer, and TSV with p+ guard ring. Analysis results in frequency domain indicate PC-TSV has a larger $\vert \text{S}_{21}\vert $ and less near-end crosstalk than other three structures. Additionally, analysis results in time domain show that the substrate voltage noise of this structure is obviously reduced compared with the TSV with p+ layer and TSV with p+ guard ring. Also, a feasible process flow for this structure is given and it is simpler than that for traditional coaxial TSV.
Highlights
Three-dimensional integrated circuit (3D IC) manufactured by stacking wafers or dies vertically using through-silicon vias (TSV) provides an effective method to enable the ’Morethan-Moore’ technology [1], [2]
As one of the most attractive solutions to improve performance without increase of power consumption, it has been employed in a wide application including MEMS inertial sensors, MEMS microphones, CMOS imagers, and power LEDs [3]–[5]
With continuous scaling of the semiconductor process and the emerging markets, such as automotive radar, high-definition video, image sensor, silicon technologies is expanding into the millimeter wave and terahertz (0.1-10 THz) field [6]
Summary
Three-dimensional integrated circuit (3D IC) manufactured by stacking wafers or dies vertically using through-silicon vias (TSV) provides an effective method to enable the ’Morethan-Moore’ technology [1], [2]. The above structures provide effective methods to suppress the crosstalk and substrate noise, the forward transmission coefficient has not been affected obviously. J. Su et al.: Partial Coaxial TSV for Suppressing the Substrate Noise in 3-Dimensional Integrated Circuit been proposed to provide high immunity to noise and excellent electrical performances [22], [23]. A novel structure named the partial coaxial TSV (PC-TSV) is proposed to suppress TSV-induced noise In this structure, the metal via is surrounded with a benzocyclobutene (BCB) layer, and a grounded metal ring placed at one end outside. Frequency domain and time domain analysis results indicate that this structure has a larger forward transmission coefficient and less near-end crosstalk compared with the traditional TSV, TSV with p+ layer and TSV with p+ guard ring.
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
