Abstract
A study of epitaxial growth of GaAs islands on (2×1) reconstructed SrTiO3(001) surface is presented. Under low arsenic partial pressures (PAs), GaAs islands are (001)-oriented, and increasing PAs leads to the progressive formation of (111)-oriented GaAs islands. This results from the competition between the formation of Ga–O and Ga–As bonds at the early stages of the growth, as supported by the analysis of the evolution of the island density with respect to PAs.
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