Abstract
Parity effect, which means that even-odd property of an integer physical parameter results in an essential difference, ubiquitously appears and enables us to grasp its physical essence as the microscopic mechanism is less significant in coarse graining. Here we report a new parity effect of quantum Hall edge transport in graphene antidot devices with pn junctions (PNJs). We found and experimentally verified that the bipolar quantum Hall edge transport is drastically affected by the parity of the number of PNJs. This parity effect is universal in bipolar quantum Hall edge transport of not only graphene but also massless Dirac electron systems. These results offer a promising way to design electron interferometers in graphene.
Highlights
Various parity effects, which mean that even-odd property of an integer physical parameter results in an essential difference, has been discovered in many physical systems, especially in mesoscopic physics
The quantum Hall (QH) edge states co-propagate along the pn junctions (PNJs) and are uniformly mixed, reflected by a massless Dirac electron nature that a Landau level is formed at charge neutrality point
This bipolar QH edge transport is not realized on conventional two-dimensional electron gas in GaAs/AlGaAs heterostructure and there are only several experimental reports about the bipolar QH edge transport in graphene[17,18,19,20,21,22,23] despite great interest
Summary
Hall edge transport around received: 26 March 2015 accepted: 03 June 2015 Published: 30 June 2015 graphene antidots. We note that Eq (2) has a power-law dependence on the number of antidots N, which is only realised in bipolar QH edge transport These calculated results mean that the resistance formulas as a function of the number of antidots is strongly dependent on the parity of M, the number of PNJs. These calculated results mean that the resistance formulas as a function of the number of antidots is strongly dependent on the parity of M, the number of PNJs Such fundamental difference, the parity effect, should be useful for graphene and QH devices of massless Dirac electron systems, such as the surface state of topological insulators[14,15] and Dirac electrons in HgTe/CdTe heterostructure[25]. These experimental results in the unipolar regime are consistent with the calculated results shown in the
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