Abstract
The presence of parasitic node capacitance on a defective resistive node can induce dynamic changes in the electrical behavior of the circuit in SRAM devices, which may be referred to as the parasitic memory effect. This effect can cause dynamic faults in SRAMs. This paper presents an analysis of the parasitic memory effect in SRAMs on the defective resistive node. The paper demonstrates that the faulty behavior in SRAMs is exacerbated in the presence of parasitic node capacitance, something that reduces the fault coverage of current memory tests, and increases the defect-per-million rates.
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