Abstract
The formation of free holes in multi-junctioned cation-faced AlGaN/GaN structures for use as heterojunction field-effect transistors (HFETs) is investigated theoretically. The model is based on a self-consistent solution of a multi-band k · p Hamiltonian, the Poisson, and charge balance equations and includes the electron and hole-induced exchange-correlation potentials via density functional theory. The piezoelectric and spontaneous polarizations are taken into account. Realistic surface boundary conditions are incorporated by imposing a sheet layer of surface donors populated according to Fermi–Dirac statistics. For cation-faced structures, the calculations show that a two-dimensional hole gas (2DHG) may form at each GaN on AlGaN interface, depending on the structural geometry.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
