Parasitic effect on silicon MEMS resonator model parameters

Abstract

Resonators in silicon-based micro electro-mechanical systems have been fabricated. Electrical equivalent circuit modeling of the resonators with DC polarization voltage has been demonstrated. The fabricated resonators have micro-flap type and bridge type structures. Embedded parasitic components in Si-substrate have been well modeled separately from intrinsic resonator model parameters. A simulation of frequency response using extracted model parameters was agreed with experimental result. It is shown that parallel parasitic capacitance deeply affects to frequency response, and reducing such effect would improve resonator performance. Accurate electrical equivalent circuit modeling of total system is very important for circuit design application such as oscillator circuits, filters, etc. with resonators.