Abstract
Modulation-doped In x Ga 1 − x As/In y Al 1 − y As/InP heterostructures have been grown with a diffusion pumped V80H gas source molecular beam epitaxy system. Their electrical properties have been studied with Hall measurements. The effects of spacer layer thickness and buffer layer structure (InAlAs or InAlAs + InP) on lattice-matched and pseudomorphic In x Ga 1 − x As/In y Al 1 − y As/InP 2DEGs and HEMTs characteristics have been investigated in detail. Crystalline and interface qualities can be improved by adding an InP buffer layer before the InAlAs buffer, resulting in an improvement in material electrical properties. A thicker spacer layer will cause a decrease of electron gas density and an increase of electron mobility. Adopting strained channel and Schottky layers can dramatically improve material electrical performance. For InGaAs/InAlAs/InP pseudomorphic 2DEG (P-2DEG) structures, electron mobilities of 11 230 cm 2/V · s at n s of 2.3 × 10 12cm −2 at 300 K and 6.52 × 10 4cm 2/V · s at n s of 2.1 × 10 12cm −2 at 77 K were obtained and μ of 9273 cm 2/V · s at 3.6 × 10 12cm −2 and 4.5 × 10 4cm 2/V · s at n s of 3.1 × 10 12cm −2 for both strained InGaAs channel layers and InAlAs Schottky layers in P-HEMT structures were achieved.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
