Abstract
In this paper, the characterization of InP via hole etching under various electron cyclotron resonance (ECR) conditions at room temperature was carried out. A mixture of Cl/sub 2//Ar plasma was used in the experiments. Etches were characterized in terms of the etch rate and via profile. The etch rates of InP were found to be able to greatly enhance by increasing Cl/sub 2/ percentage in the Cl/sub 2//Ar mixture, RF power or microwave power, but decreased by increasing process pressure. A 100 /spl mu/m deep tapered profile has been achieved using a /spl sim/4 /spl mu/m/min process without intentionally heating up the electrode. The gradient of the via was about 77/spl deg/ and is suitable for the via hole fabrication for monolithic microwave integrated circuits (MMIC) applications. To the best of our knowledge, this is the highest etch rate ever reported in InP substrate for via hole applications.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
