Abstract
The efficiency and output light power is the most important factor for a Light Emitting Diode (LED) application. In pursuit of high Internal Quantum Efficiency (IQE), the Violet GaN/GaAlInN Multiple Quantum Well (MQW) LEDs are simulated by APSYS software. The effects of variation in number of wells and thickness of well on LED characteristics is observed & these two parameters are optimized for violet colour LED. As the number of quantum well (QW) is varied from 1 to 7 and thickness of QW is varied from 1 nm to 3.5 nm, the obtained result of power, Internal Quantum Efficiency (IQE) and spontaneous rate is excellent for the Violet GaN/GaAlInN MQW LED.
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