Parametric oscillation of acoustical phonon mode in magnetized doped III–V semiconductors

Abstract

Using the hydrodynamic model of semiconductor plasmas and coupled mode theory of interacting waves, we develop a theoretical formulation followed by numerical analysis to study parametric oscillation of acoustical phonon mode in magnetized doped III–V semiconductors. The origin of nonlinear interaction is assumed to lie in effective second-order optical susceptibility ( $$\chi^{(2)}$$ ) arising due to nonlinear induced current density and acousto-optic polarization of the semiconductor medium. Expressions are obtained for threshold pump intensity ( $$I_{{0,{\text{th}}}}$$ ) and operational characteristics such as conversion efficiency ( $$\eta_{k}$$ ) and single pass signal power gain ( $$g_{{{\text{sp}}}}$$ ) of the proposed single resonant optical parametric oscillator. Numerical analysis is made for a representative n-InSb crystal irradiated by 10.6 µm pulsed CO2 laser. The effects of some important parameters including external magnetic field ( $$B_{0}$$ ), mirror reflectivity ( $$R$$ ), crystal length ( $$L$$ ), etc. on $$I_{{0,{\text{th}}}}$$ , $$\eta_{k}$$ and $$g_{{{\text{sp}}}}$$ of the single resonant optical parametric oscillator are analyzed in detail. The analysis establishes the technological potentiality of magnetized doped III–V semiconductors as the hosts for fabrication of highly efficient and widely tunable single-resonant optical parametric oscillators.