Abstract

To acquire X-ray images, we can use indirect flat-panel detectors, which have photodiodes and thin-film-transistors with a CsI(TI)-scintillator layer. In this paper, parametric modeling is conducted to describe the indirect flat-panel detector. The noise power spectrum and the modulation transfer function of the detector are modeled with Gaussian shape curves with parameters. Based on the proposed parametric model, we can provide theoretical derivations as well as Monte Carlo simulations for obtaining the corresponding detective quantum efficiency. This model is also useful in analyzing dual-layer detectors in dual energy imaging.

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