Abstract
The general theory of parametric coupling between space-charge waves and drifting charge carriers in thin-film semiconductor structures has been worked out. This theory is applicable, in particular, to n-GaAs and n-InP semiconductors with negative differential conductance due to intervalley electron transitions under high electric fields. We started from the electrodynamic theory of waveguide excitation by extraneous currents, which was extended for arbitrary waveguide structures with composite active media. Our theory makes it possible to study parametric interaction between space-charge waves in semiconductor films with regard for boundary conditions, diffusion, the anisotropy and the frequency dispersion of the differential electron mobility, as well as the multifrequency and multimode nature of a wave process in thin-film structures.
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