Abstract
AbstractUsing the hydrodynamic model of a semiconductor plasma, a detailed analytical investigation of parametric excitation is made for a doped piezoelectric semiconductor in presence of a large transverse magnetostatic field. The analysis deals with the qualitative behaviour of the threshold condition and the gain mechanisms with respect to the doping level and the magnetostatic field. Numerical estimates are made for n‐InSb crystals at 77 K duly shined by a 10.6 μm CO2 laser. Efforts are directed towards optimizing the doping level and the applied magnetic field for the occurrence of parametric excitation using the lowest possible threshold to yield the maximum possible gain. The analysis suggests the possibility of observing parametric gain in a moderately doped magnetoactiv n‐InSb crystal even under continuous wave laser irradiation for an excitation intensity as low as 1 W cm−2.
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