Parameters of plasma and mechanisms of etching of metals and semiconductors in HCl + Ar, H2, O2, and Cl2 mixtures

Abstract

A comparative study of the effect of the initial composition of the HCl + Ar, H2, O2, and Cl2 binary mixtures on the steady-state physical parameters and composition of direct-current glow-discharge plasma was carried out. Information on the reduced electric field intensity, average energy and concentration of electrons, concentrations and densities of fluxes of atoms and ions were obtained. A simulation analysis of the effect of the initial composition of mixtures on the kinetics of the interaction between reactive species of plasma and the surface in the ion-stimulated chemical reaction mode is carried out.