Abstract
Limiting parameters (operating temperature and cutoff frequency) and current-voltage characteristics of one-electron transistors based on various metal compounds (Al/AlOx/Al, Al/SiO2/Al, Au/Al2O3/Au, Nb/Al2O3/Nb, Ti/TiOx/Ti, Cr/Cr2O3/Cr, and Nb/NbOx/Nb) were theoretically studied. Practical recommendations for the choice of materials and structure sizes were formulated. The characteristics were calculated using a SET-NANODEV software package based on the effect of one-electron tunneling and developed for structure simulation according to a technique for estimating the limiting parameters and a two-dimensional numerical model of the metal one-electron transistor.
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