Abstract
Limiting parameters (operating temperature and cutoff frequency) and current-voltage characteristics of one-electron transistors based on various metal compounds (Al/AlOx/Al, Al/SiO2/Al, Au/Al2O3/Au, Nb/Al2O3/Nb, Ti/TiOx/Ti, Cr/Cr2O3/Cr, and Nb/NbOx/Nb) were theoretically studied. Practical recommendations for the choice of materials and structure sizes were formulated. The characteristics were calculated using a SET-NANODEV software package based on the effect of one-electron tunneling and developed for structure simulation according to a technique for estimating the limiting parameters and a two-dimensional numerical model of the metal one-electron transistor.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
