Parameters of Intrinsic Point Defects in Silicon Based on Crystal Growth, Wafer Processing, Self- and Metal- Diffusion

Abstract

The vacancies and self-interstitials in silicon are involved, in a straightforward way, in various phenomena such as formation of grown-in microdefects, diffusion of metals (Au, Zn), self-diffusion and installation of vacancy depth profiles into wafers by Rapid Thermal Annealing. The available data is sufficient to deduce the diffusivities and equilibrium concentrations of the intrinsic point defects leaving only one parameter (the migration energy of self-interstitials) not specified. The diffusivities are high while the equilibrium concentrations are remarkably low.