Parameters of electron–hole scattering in silicon carbide

Abstract

The parameters of electron–hole scattering (EHS) in silicon carbide (SiC) are estimated by analyzing pulsed isothermal current–voltage characteristics of 6.0 kV 4H–SiC diodes over a wide range of current densities (100–104 A/cm2) and external temperatures (293–553 K). The efficiency of EHS in SiC is approximately two times higher than that in Si and 60 times higher than that in GaAs. The EHS makes a very essential contribution to voltage drop across SiC bipolar devices at high forward current densities.