Abstract
An investigation was made of the laser action in compensated gallium arsenide doped with donors (Te or Sn) and acceptors (Zn). Such doping reduced considerably the threshold current density and the working voltage of electron-beam-pumped lasers. The lowest values of the threshold were 0.1 A/cm2 at T≈85°K and 1.5 A/cm2 at T≈300°K. The maximum efficiency reached 30% at T≈85°K and 21% at T≈300°K. A waveguide resonator structure ensured that these values of the threshold current and the efficiency were not affected when the electron energy was reduced from 50 keV to ~25 keV. A further redution of the electron energy to 9 keV caused the threshold current density to rise to 1.5 A/cm2 at T≈85°K.
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