Abstract
Planar Schottky diodes play important roles in THz mixers and multipliers. Accurate parameters extraction and modeling of the diodes have decisive effect in the optimization of these components. In present research, parameters extractions are mostly limited to single-anode or specially-designed diodes. Models for multi-anodes diodes have been investigated using parameters data from diodes manufacturers, which are not always available. Parameter extraction and modeling for unknown commercial multi-anodes diodes remain to be studied. In this paper, the methods for parameters extraction are successfully extended to a commercial four-anodes THz GaAs Schottky diode. Five critical intrinsic parameters and the parasitic parameters up to 220 GHz are investigated. A comprehensive model of the diode is developed. Its accuracy is verified by the good agreement between the simulative and measured S parameters. Our methods provide approaches for systematic studying unknown commercial multi-anodes Schottky diodes.
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